Method of manufacturing a semiconductor device
US7604926B2 · kind B2 · utility
11Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2006 |
| Grant date | Oct 20, 2009 |
| Priority date | — |
| Expiry date | Oct 5, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/41
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device, comprises forming a first mask pattern on an under-layer region, forming a plurality of dummy-line patterns on the under-layer region, the dummy-line patterns being arranged at a first pitch, forming second mask patterns having mask parts provided on long sides of the dummy-line patterns, removing the dummy-line patterns, and etching the under-layer region by using the first mask pattern and the mask parts as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.