Method of manufacturing a semiconductor device and products made thereby
US7605017B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2007 |
| Grant date | Oct 20, 2009 |
| Priority date | — |
| Expiry date | Oct 11, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
Methods of manufacturing a semiconductor device and resulting products. The semiconductor device includes a semiconductor substrate, a hetero semiconductor region hetero-adjoined with the semiconductor substrate, a gate insulation layer contacting the semiconductor substrate and a heterojunction of the hetero semiconductor region, a gate electrode formed on the gate insulation layer, an electric field alleviation region spaced apart from a heterojunction driving end of the heterojunction that contacts the gate insulation layer by a predetermined distance and contacting the semiconductor substrate and the gate insulation layer, a source electrode contacting the hetero semiconductor region and a drain electrode contacting the semiconductor substrate. A mask layer is formed on the hetero semiconductor region, and the electric field alleviation region and the heterojunction driving end are formed by using at least a portion of the first mask layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.