Method of fabricating a bipolar transistor

US7605027B2 · kind B2 · utility

Assignee

• NXP B.V. · NL

Inventors

• Philippe Meunier-Beillard · Steenokkerzeel, BE
• Erwin Hijzen · Blanden, BE
• Johannes J. T. M. Donkers · Steenokkerzeel, BE
• Francois Neuilly · Colomby-sur-Thaon, FR

Key dates

• Filing date: Apr 24, 2006
• Grant date: Oct 20, 2009
• Expiry date: May 30, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/137

Abstract

A method of fabricating a bipolar transistor in a first trench (11) is disclosed wherein only one photolithographic mask is applied which forms a first trench (11) and a second trench (12). A collector region (21) is formed self-aligned in the first trench (11) and the second trench (12). A base region (31) is formed self-aligned on a portion of the collector region (21), which is in the first trench (11). An emitter region (41) is formed self-aligned on a portion of the base region (31). A contact to the collector region (21) is formed in the second trench (12) and a contact to the base region (31) is formed in the first trench (11). The fabrication of the bipolar transistor may be integrated in a standard CMOS process.