Method for the integration of two bipolar transistors in a semiconductor body, semiconductor arrangement in a semiconductor body, and cascode circuit

US7605047B2 · kind B2 · utility

Assignee

• Atmel Automotive GmbH · DE

Inventor

• Christoph Bromberger · Heilbronn, DE

Key dates

• Filing date: Mar 3, 2006
• Grant date: Oct 20, 2009
• Expiry date: May 21, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D88/01

Abstract

A method for the integration of two bipolar transistors in a semiconductor body, wherein, for the first bipolar transistor, a first emitter semiconductor region, a first base semiconductor region, and a first collector semiconductor region are produced. A recombination layer is applied to the first bipolar transistor, which is adjacent to the first emitter semiconductor region or the first collector semiconductor region and is constructed in such a way that charge carriers recombine on the recombination layer, and next, the second bipolar transistor is placed on the recombination layer, wherein a second emitter semiconductor region, a second base semiconductor region, and a second collector semiconductor region are produced on the recombination layer, so that the second emitter semiconductor region or the second collector semiconductor region is adjacent to the recombination layer.