Method of manufacturing a semiconductor device from which damage layers and native oxide films in connection holes have been removed
US7605076B2 · kind B2 · utility
1Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2006 |
| Grant date | Oct 20, 2009 |
| Priority date | — |
| Expiry date | May 7, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76814
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulating film formed on a conducting layer is dry-etched so as to make a connection hole in the insulating film to expose the conducting layer. Plasma is supplied onto the exposed conducting layer to dry-clean a damage layer produced in the connection hole. A product produced in the connection hole as a result of the dry cleaning is removed by a wet process. An oxide film formed in the connection hole as a result of the wet process is etched by a chemical dry process using a gas including either NF3 or HF. A thermally decomposable reaction product produced as a result of the etching is removed by heat treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.