Method of forming metal oxide using an atomic layer deposition process
US7605094B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2007 |
| Grant date | Oct 20, 2009 |
| Priority date | — |
| Expiry date | Oct 12, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02205
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of forming a metal oxide, an organic metal compound represented by the following chemical formula is introduced into a chamber to chemisorb the organic metal compound onto a substrate,M[L1]x[L2]ywhere M represents a metal, L1 and L2 respectively represents a first and second ligands. In addition, x and y are independently integers and a value of (x+y) is 3 to 5. An oxygen-containing compound is introduced into the chamber to form the metal oxide. The metal oxide is formed by reacting an oxygen of the oxygen-containing compound with the metal, and separating the ligand from the metal. Thus, the metal oxide having a superior step coverage and a high dielectric constant may be formed using the organic metal compound by an atomic layer deposition process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.