Semiconductor light-emitting device and fabrication method of the same
US7605403B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2005 |
| Grant date | Oct 20, 2009 |
| Priority date | — |
| Expiry date | Jan 11, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
Abstract
A semiconductor light-emitting device can include a nitride semiconductor light-emitting layer and can supply a current to an entire light-emitting region quickly and efficiently to output high-intensity light. The semiconductor light-emitting device can include: a transparent substrate; a first conductivity type nitride semiconductor layer; a nitride semiconductor light-emitting layer; a second conductivity type nitride semiconductor layer; a notch region that cuts the second conductivity type nitride semiconductor layer and the nitride semiconductor light-emitting layer and exposes the first conductivity type nitride semiconductor layer, to define mesa active regions and a mesa electrode drawing region; an electrode for the first conductivity type; an ohmic electrode for the second conductivity type; and a supporting substrate including connecting members for the first and second conductivity types.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.