High frequency arrangement
US7605450B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 23, 2006 |
| Grant date | Oct 20, 2009 |
| Priority date | — |
| Expiry date | Jan 29, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high frequency arrangement is provided that includes an integrated high frequency circuit, a first bond pad, which is electrically connected by a first electrical supply line, in particular a bond wire and/or a solder bump, to a housing terminal and/or another circuit, wherein the first bond pad adjoins a dielectric so that the first bond pad forms a first capacitance with the dielectric and an electrically conductive region of the integrated high-frequency circuit, and the first capacitance and the first supply line, which has an inductance, influence a (tuned) first resonant frequency associated with the high-frequency circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.