Solid-state image sensing device and camera
US7605853B2 · kind B2 · utility
1Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 12, 2005 |
| Grant date | Oct 20, 2009 |
| Priority date | — |
| Expiry date | Dec 29, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/78
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A solid-state imaging device includes a source-follower amplifier having a driver transistor and a load circuit connected to the driver transistor. The load circuit is structured by a first MOS transistor having a gate with a fixed potential, and a load device connected to a source of the first MOS transistor. Furthermore, the load circuit of the source-follower amplifier is structured by a plurality of serially connected MOS transistors. Furthermore, by adapting a structure using a current mirror circuit, load conductance is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.