Patent · US Active

Pixel structure and fabrication method thereof

US7605889B2 · kind B2 · utility

1Cited by
4References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 29, 2006
Grant dateOct 20, 2009
Priority date—
Expiry dateOct 26, 2027

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02F1/136231
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A pixel structure including a substrate, a gate, a dielectric layer, a semiconductor layer, a plurality of semiconductor bumps, a source, a drain and a reflective pixel electrode is disclosed. The gate is disposed on the substrate. The dielectric layer is disposed on the substrate and covers the gate. The semiconductor layer is disposed on the dielectric layer over the gate. The semiconductor bumps are disposed on the dielectric layer. The source and drain are disposed on the semiconductor layer. The reflective pixel electrode covering the semiconductor bumps is disposed on the dielectric layer and electrically connected to the drain.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.