Etched-facet ridge lasers with etch-stop
US7606277B2 · kind B2 · utility
1Cited by
6References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2006 |
| Grant date | Oct 20, 2009 |
| Priority date | — |
| Expiry date | Dec 26, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2214
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photonic device incorporate an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etching. The dry etch is designed to stop before reading the depth needed to form the ridge. The wet etch completes the formation of the ridge and stops at the wet etch stop layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.