P-type semiconductor zinc oxide films process for preparation thereof, and pulsed laser deposition method using transparent substrates
US7608308B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2006 |
| Grant date | Oct 27, 2009 |
| Priority date | — |
| Expiry date | Nov 23, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/28
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A p-type semiconductor zinc oxide (ZnO) film and a process for preparing the film are disclosed. The film is co-doped with phosphorous (P) and lithium (Li). A pulsed laser deposition scheme is described for use in growing the film. Further described is a process of pulsed laser deposition using transparent substrates which includes a pulsed laser source, a substrate that is transparent at the wavelength of the pulsed laser, and a multi-target system. The optical path of the pulsed laser is arranged in such a way that the pulsed laser is incident from the back of the substrate, passes through the substrate, and then focuses on the target. By translating the substrate towards the target, this geometric arrangement enables deposition of small features utilizing the root of the ablation plume, which can exist in a one-dimensional transition stage along the target surface normal, before the angular width of the plume is broadened by three-dimensional adiabatic expansion. This can provide small deposition feature sizes, which can be similar in size to the laser focal spot, and provides a novel method for direct deposition of patterned materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.