Producing SOI structure using high-purity ion shower
US7608521B2 · kind B2 · utility
13Cited by
14References
45Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 31, 2006 |
| Grant date | Oct 27, 2009 |
| Priority date | — |
| Expiry date | Aug 3, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.