Semiconductor device, module, and electronic device including a conversion circuit having a second switch rendered conductive together with a first switch
US7608810B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 14, 2006 |
| Grant date | Oct 27, 2009 |
| Priority date | — |
| Expiry date | Sep 4, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/12
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The breakdown voltage between the potential of a terminal and the ground potential (or power supply potential) is improved by increasing the gate width of an MOS transistor included in a switch. Accordingly, another switch and the like are protected even when surge is applied to the terminal. By increasing the gate width of the MOS transistor included in the switch, the size of the other switch does not have to be increased. Therefore, variation in the potential at a node occurring when the other switch attains a non-conductive state from a conductive state can be suppressed. Therefore, a semiconductor device having the electrostatic breakdown voltage improved without influence on processing carried out based on an input potential from an external source, a module including a plurality of such semiconductor devices, and an electronic device including such a module can be provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.