Doped carbon nanostructure field emitter arrays for infrared imaging
US7608824B2 · kind B2 · utility
5Cited by
7References
10Claims
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Key dates
| Filing date | Sep 20, 2007 |
| Grant date | Oct 27, 2009 |
| Priority date | — |
| Expiry date | Jan 31, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/014
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An infrared imaging device and method for making infrared detector(s) having at least one anode, at least one cathode with a substrate electrically connected to a plurality of doped carbon nanostructures; and bias circuitry for applying an electric field between the anode and the cathode such that when infrared photons are absorbed by the nanostructures the emitted field current is modulated. The detectors can be doped with cesium to lower the work function.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.