Quad SRAM based one time programmable memory
US7609578B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2007 |
| Grant date | Oct 27, 2009 |
| Priority date | — |
| Expiry date | Apr 14, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A quad SRAM based one time programmable memory cell is provided. Prior to programming, the memory cell operates as an SRAM memory cell. After programming, the memory cell operates as a one-time programmable non-volatile memory cell. The memory cell includes a storage element coupled at a first side to a first upper fuse and a first lower fuse and coupled at a second side to a second upper fuse and a second lower fuse. When the first upper fuse and second lower fuse are programmed, the storage element outputs a first value. When the second upper fuse and first lower fuse are programmed, the storage element outputs a second value. After programming the upper fuse acts as a pull-up fuse and the lower fuse acts as a pull-down fuse hold the state of the cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.