Methods of spin-on wafer cleaning
US7611589B2 · kind B2 · utility
1Cited by
5References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2005 |
| Grant date | Nov 3, 2009 |
| Priority date | — |
| Expiry date | Dec 16, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67051
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A method for spin-on wafer cleaning. The method comprises controlling spin speed and vertical water jet pressure. The vertical jet pressure and the spin speed are substantially maintained in inverse proportion. Wafer spin speed is between 50 to 1200 rpm. Vertical wafer jet pressure is between 0.05 to 100 KPa.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.