Multi-gate thin film transistor having recrystallized channel regions with different grain sizes

US7612379B2 · kind B2 · utility

Assignee

• TPO Displays Corp. · TW

Inventors

• Yoshihiro Morimoto · Inazawa, JP
• Ryan Lee · Lo Wu, CN
• Hanson Liu · Watertown, US
• Fengyi Chen · Pingtung City, TW

Key dates

• Filing date: Nov 9, 2007
• Grant date: Nov 3, 2009
• Expiry date: Nov 27, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/60

Abstract

An image display system has a multi-gate thin film transistor (TFT) disposed on a transparent substrate. The multi-gate TFT includes a silicon film layer, a first electrode and a reflecting layer. The silicon film layer is formed on the transparent substrate and has a first crystallization zone and a second crystallization zone, which are not adjacent to each other. A grain size of the first crystallization zone is smaller than a grain size of the second crystallization zone. The first electrode corresponding to the first crystallization zone is disposed on the silicon film layer. The reflecting layer corresponding to the second crystallization zone is disposed on the transparent substrate. The silicon film layer is disposed on the transparent substrate and the reflecting layer.