Semiconductor device having a conductive portion below an interlayer insulating film and method for producing the same
US7612416B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2004 |
| Grant date | Nov 3, 2009 |
| Priority date | — |
| Expiry date | Dec 10, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6213
Abstract
A semiconductor device comprising: a MIS type field effect transistor which comprises a semiconductor raised portion protruding from a substrate plane, a gate electrode extending over the semiconductor raised portion from the top onto the opposite side faces of the semiconductor raised portion, a gate insulation film existing between the gate electrode and the semiconductor raised portion, and source and drain regions provided in the semiconductor raised portion; an interlayer insulating film provided on a substrate including the transistor; and a buried conductor interconnect that is formed by filling in a trench formed in the interlayer insulating film with a conductor, wherein the buried conductor interconnect connects one of the source and drain regions of the semiconductor raised portion and another conductive portion below the interlayer insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.