P-type ZnS based semiconductor material having a low resistance due to its high copper content
US7612432B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2005 |
| Grant date | Nov 3, 2009 |
| Priority date | — |
| Expiry date | Oct 19, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/123
Abstract
It is an object to provide a p-type ZnS based semiconductor material having a low resistance which can easily form an ohmic contact to a metallic material. Moreover, the invention provides a semiconductor device and a semiconductor light emitting device which include an electrode having a low resistance on a substrate other than a single crystal substrate, for example, a glass substrate.The semiconductor material according to the invention is used as a hole injecting electrode layer of a light emitting device and has a transparent property in a visible region which is expressed in a composition formula of Zn(1-α-β-γ)CuαMgβCdγS(1-x-y)SexTey (0.004≦α≦0.4, β≦0.2, γ≦0.2, 0≦x≦1, 0≦y≦0.2, and x+y≦1).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.