Layered structure for electron device including regions of different wettability, electron device and electron device array that uses such a layered structure
US7612455B2 · kind B2 · utility
13Cited by
25References
19Claims
0Family size
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Key dates
| Filing date | Jun 1, 2004 |
| Grant date | Nov 3, 2009 |
| Priority date | — |
| Expiry date | Jun 28, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0321
Abstract
A layered structure comprises a variable wettability layer including a material that changes a critical surface tension in response to energy provided thereto, the wettability changing layer including at least a high surface energy part of large critical surface tension and a low surface energy part of low critical surface tension, a conductive layer formed on the variable wettability layer at the high surface energy tension part, and a semiconductor layer formed on the variable wettability layer at the low surface energy part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.