Two-wavelength semiconductor laser device and method for fabricating the same
US7613220B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2007 |
| Grant date | Nov 3, 2009 |
| Priority date | — |
| Expiry date | Oct 3, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/173
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A first and second semiconductor laser, which comprise buffer layers, cladding layers, quantum well active layers, and cladding layers integrated on the substrate and have a stripe geometry, are integrated on a common substrate, with the quantum well active layers in the vicinity of the cavity facets disordered by impurity diffusion. Relationships λ1>λb1, λ2>λb2, λ1>λ2, and E1≦E2 are satisfied, where λ1 and λ2 are defined, respectively, as the emission wavelengths of the active layers of the first and second semiconductor lasers, E1 and E2, respectively, as the forbidden band energies of the buffer layers of the first and second semiconductor lasers, and λb1 and λb2 respectively as the wavelengths corresponding to the forbidden band energies of the buffer layers of the first and second semiconductor lasers. The generation of reactive currents flowing through the window portions, which is caused by the intensification of disordering performed for window region formation, can be appropriately suppressed for both types of integrated semiconductor lasers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.