Method for fabricating an interposer
US7614142B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2008 |
| Grant date | Nov 10, 2009 |
| Priority date | — |
| Expiry date | Feb 5, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49156
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating an interposer includes: forming on one primary surface of a first substrate a thin-film capacitor including a first capacitor electrode, a crystalline capacitor dielectric film formed on the first electrode and a second capacitor electrode formed on the dielectric film; and forming on the primary surface of the first substrate and the capacitor a first layer as semi-cured, and a first partial electrode to be a part of a through-electrode, buried in the first resin layer and electrically connected to the first electrode or the second electrode. The method further includes cutting an upper part of the first partial electrode and an upper part of the first resin layer with a cutting tool; forming on one primary surface of a second substrate a second resin layer as semi-cured, and a second partial electrode to be a part of the through-electrode, buried in the second resin layer and disposed in alignment with the first partial electrode; cutting an upper part of the second partial electrode and an upper part of the second resin layer with a cutting tool; making thermal processing with the first resin layer and the second resin layer in close contact with each ot…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.