Methods of forming multi-doped junctions on a substrate
US7615393B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2008 |
| Grant date | Nov 10, 2009 |
| Priority date | — |
| Expiry date | Oct 29, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron, the substrate including a first substrate surface with a first surface region and a second surface region. The method also includes depositing a first set of nanoparticles on the first surface region, the first set of nanoparticles including a first dopant. The method further includes heating the substrate in an inert ambient to a first temperature and for a first time period creating a first densified film, and further creating a first diffused region with a first diffusion depth in the substrate beneath the first surface region. The method also includes exposing the substrate to a diffusion gas including phosphorous at a second temperature and for a second time period creating a PSG layer on the first substrate surface and further creating a second diffused region with a second diffusion depth in the substrate beneath the second surface region, wherein the first diffused region is proximate to the second diffused region. The method further includes exposing the substrate to a oxidizing gas at a third temperature and for a third time period, wherein…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.