Photodiode stack for photo MOS relay using junction isolation technology
US7615396B1 · kind B1 · utility
3Cited by
8References
1Claims
0Family size
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Inventor
Key dates
| Filing date | Apr 28, 2008 |
| Grant date | Nov 10, 2009 |
| Priority date | — |
| Expiry date | Apr 28, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F55/255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A novel photodiode stack which comprising of more than 3 photodiodes connected in series to produce a large photovoltaic voltage in the presence of light using junction isolation technology.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.