Method for forming a capacitor structure

US7615444B2 · kind B2 · utility

Assignee

• Qimonda AG · DE

Inventors

• Odo Wunnicke · Dresden, DE
• Peter Moll · Dresden, DE
• Kristin Schupke · Dresden, DE

Key dates

• Filing date: Jun 29, 2006
• Grant date: Nov 10, 2009
• Expiry date: Mar 1, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/31

Abstract

A method for forming a capacitor structure, according to which the following consecutive steps are executed: providing a substrate having on its surface contact pads and a dielectric mold provided with at least one trench leaving exposed the contact pads; forming a first conductive layer on side walls of the trench in a top region of the trench the conductive layer being without contact to the contact pads; depositing a first dielectric layer; depositing a second conductive layer on the contact pad and on the side walls of the trench; depositing a second dielectric layer; depositing a third conductive layer; and forming a vertical plug interconnecting the first conductive layer and the third conductive layer.