Patent · US Active

Amorphous silicon crystallization using combined beams from optically pumped semiconductor lasers

US7615722B2 · kind B2 · utility

10Cited by

23References

17Claims

0Family size

Assignee

Coherent, Inc. · US

Inventors

Sergei V. Govorkov · Mountain View, US
R. Russel Austin · Rue de l'Église, US
Joerg Ferber · Angerstein, DE

Key dates

Filing date	Jul 17, 2006
Grant date	Nov 10, 2009
Priority date	—
Expiry date	Nov 29, 2027

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB23K2101/40
WIPO fieldMachine tools
WIPO sectorMechanical engineering

Abstract

An amorphous silicon layer on a glass substrate is crystallized by concentrating CW radiation from a number of OPS-lasers into a line of light on the layer. The layer is moved with respect to the line of light to control the dwell time of the line on any location on the layer and to crystallize an extended area of the layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.