Method for monolithically integrating silicon carbide microelectromechanical devices with electronic circuitry

US7615788B2 · kind B2 · utility

Assignee

• Cornell Research Foundation, Inc. · US

Inventors

• Kevin Kornegay · West Lafayette, US
• Andrew R. Atwell · Alexandria, US
• Mihaela Balseanu · Sunnyvale, US
• Jon Sweat Duster · Beaverton, US
• Eskinder Hailu · Austin, US
• Ce Li · Beijing, CN

Key dates

• Filing date: Jan 29, 2007
• Grant date: Nov 10, 2009
• Expiry date: Jan 29, 2027

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81C2203/0735
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A device and method of forming electronics and microelectromechanical on a silicon carbide substrate having a slow etch rate is performed by forming circuitry on the substrate. A protective layer is formed over the circuitry having a slower etch rate than the etch rate of the silicon carbide substrate. Microelectromechanical structures supported by the substrate are then formed. The circuitry comprises a field effect transistor in one embodiment, and the protective layer comprises a heavy metal layer.