Quantum dot light emitting layer
US7615800B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 14, 2005 |
| Grant date | Nov 10, 2009 |
| Priority date | — |
| Expiry date | Aug 29, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/95
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
An inorganic light emitting layer having a plurality of light emitting cores, each core having a semiconductor material that emits light in response to recombination of holes and electrons, each such light emitting core defining a first bandgap; a plurality of semiconductor shells formed respectively about the light emitting cores to form core/shell quantum dots, each such semiconductor shell having a second bandgap wider than the first bandgap; and a semiconductor matrix connected to the semiconductor shells to provide a conductive path through the semiconductor matrix and to each such semiconductor shell and its corresponding light emitting core so as to permit the recombination of holes and electrons.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.