Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure

US7615802B2 · kind B2 · utility

Assignee

• Siced Electronics Development GmbH & Co. KG · DE

Inventors

• Rudolf Elpelt · Erlangen, DE
• Heinz Mitlehner · Uttenreuth, DE
• Reinhold Schorner · Großenseebach, DE

Key dates

• Filing date: Mar 19, 2003
• Grant date: Nov 10, 2009
• Expiry date: May 22, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/235

Abstract

The invention relates to a semiconductor structure for controlling a current (I), comprising a first n-conductive semiconductor region (2), a current path that runs within the first semiconductor region (2) and a channel region (22). The channel region (22) forms part of the first semiconductor region (2) and comprises a base doping. The current (I) in the channel region (22) can be influenced by means of at least one depletion zone (23, 24). The channel region (22) contains an n-conductive channel region (225) for conducting the current, said latter region having a higher level of doping than the base doping. The conductive channel region (225) is produced by ionic implantation in an epitaxial layer (262) that surrounds the channel region (22).