CMOS image sensor and method for manufacturing the same
US7615838B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 6, 2007 |
| Grant date | Nov 10, 2009 |
| Priority date | — |
| Expiry date | Sep 6, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
Abstract
A CMOS image sensor and a method for manufacturing the same. In one example embodiment, a CMOS image sensor includes a field region and an active region, a second conductive bottom region, a first conductive well region, a second conductive top region, and a first conductive high concentration region. The field region and the active region are formed in a first conductive semiconductor substrate. The second conductive bottom region has a first depth in part of the active region. The first conductive well region is formed in the active region. The second conductive top region has a depth that is less than the first depth. The first conductive high concentration region has a depth that is less than the depth of the second conductive top region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.