Nonvolatile semiconductor memory device and method of manufacturing the same
US7619274B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2005 |
| Grant date | Nov 17, 2009 |
| Priority date | — |
| Expiry date | Mar 22, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor memory device includes a floating gate electrode which is selectively formed on a main surface of a first conductivity type with a first gate insulating film interposed therebetween, a control gate electrode formed on the floating gate electrode with a second gate insulating film interposed therebetween, and source/drain regions of a second conductivity type which are formed in the main surface of the substrate in correspondence with the respective gate electrodes. The first gate electrode has a three-layer structure in which a silicon nitride film is held between silicon oxide films, and the silicon nitride film includes triple coordinate nitrogen bonds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.