Layer acoustic wave device and method of making the same
US7619347B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | May 5, 2006 |
| Grant date | Nov 17, 2009 |
| Priority date | — |
| Expiry date | Nov 5, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49155
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The present invention provides a layer acoustic wave device that is formed without requiring a bonding process to attach a secondary substrate. In particular, the layer acoustic wave device is formed from a substrate, an interdigital transducer created on the substrate, a dielectric layer formed over the interdigital transducer and substrate, and at least one isolation layer formed over the dielectric layer. The at least one isolation layer has sufficient properties to minimize particle displacement on a top surface of the at least one isolation layer. The at least one isolation layer has a greater acoustic impedance than that of the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.