Single crystalline gallium nitride thick film having reduced bending deformation
US7621998B2 · kind B2 · utility
5Cited by
17References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2005 |
| Grant date | Nov 24, 2009 |
| Priority date | — |
| Expiry date | Apr 14, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a freestanding, thick, single crystalline gallium nitride (GaN) film having significantly reduced bending deformation. The inventive GaN film having a crystal tilt angle of C-axis to the <0001> direction per surface distance of 0.0022°/mm exhibits little bending deformation even at a thickness of 1 mm or more, and therefore, is beneficially used as a substrate for a luminescent device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.