Sacrificial substrate for etching
US7622048B2 · kind B2 · utility
8Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2005 |
| Grant date | Nov 24, 2009 |
| Priority date | — |
| Expiry date | Jan 22, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/53983
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
A method of etching a silicon substrate is described. The method includes bonding a first silicon substrate to a sacrificial silicon substrate. The first silicon substrate is etched. A pressure is applied at an interface of the first silicon substrate and the sacrificial silicon substrate to cause the first silicon substrate to separate from the sacrificial silicon substrate. An apparatus having metal blades can be used to separate the substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.