Method of plasma enhanced chemical vapor deposition of diamond using methanol-based solutions
US7622151B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 5, 2004 |
| Grant date | Nov 24, 2009 |
| Priority date | — |
| Expiry date | Dec 17, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3244
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Briefly described, methods of forming diamond are described. A representative method, among others, includes: providing a substrate in a reaction chamber in a non-magnetic-field microwave plasma system; introducing, in the absence of a gas stream, a liquid precursor substantially free of water and containing methanol and at least one carbon and oxygen containing compound having a carbon to oxygen ratio greater than one, into an inlet of the reaction chamber; vaporizing the liquid precursor; and subjecting the vaporized precursor, in the absence of a carrier gas and in the absence in a reactive gas, to a plasma under conditions effective to disassociate the vaporized precursor and promote diamond growth on the substrate in a pressure range from about 70 to 130 Torr.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.