CMOS image sensor and fabricating method thereof
US7622320B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 28, 2007 |
| Grant date | Nov 24, 2009 |
| Priority date | — |
| Expiry date | Dec 9, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
A CMOS image sensor and method of fabricating the same are disclosed. The method comprises forming a plurality of polysilicon patterns on a silicon epitaxial layer which correspond to a plurality of photodiodes in a dummy pixel area, depositing a metal with a high melting point metal on the plurality of polysilicon patterns using a photoresist in an etching process, forming a silicide layer of the high melting point metal by removing the photoresist and then performing an ashing and rapid annealing process, sequentially forming a device protecting layer and a planarization layer on the silicon epitaxial layer and silicide layer, and forming a microlens on the planarization layer which corresponds to the silicide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.