Method for manufacturing semiconductor device
US7622362B2 · kind B2 · utility
2Cited by
0References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 9, 2007 |
| Grant date | Nov 24, 2009 |
| Priority date | — |
| Expiry date | May 22, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6739
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to the present invention, there is provided a method for manufacturing a semiconductor device that includes preparing a first semiconductor substrate and a second semiconductor substrate, forming a first insulating film on a surface of the first semiconductor substrate, forming circuit elements on a first surface of the second semiconductor substrate, grinding a second surface of the second semiconductor substrate, forming a second insulating film on the second surface of the second semiconductor substrate, and bonding the first insulating film and the second insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.