Methods of forming conductive polysilicon thin films via atomic layer deposition and methods of manufacturing semiconductor devices including such polysilicon thin films
US7622383B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2006 |
| Grant date | Nov 24, 2009 |
| Priority date | — |
| Expiry date | Feb 8, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a conductive polysilicon thin film and a method of manufacturing a semiconductor device using the same are provided. The method of forming a conductive polysilicon thin film may comprise simultaneously supplying a Si precursor having halogen elements as a first reactant and a dopant to a substrate to form a first reactant adsorption layer that is doped with impurities on the substrate and then supplying a second reactant having H (hydrogen) to the first reactant adsorption layer to react the H of the second reactant with the halogen elements of the first reactant to form a doped Si atomic layer on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.