Method of forming low-k dielectrics using a rapid curing process
US7622399B2 · kind B2 · utility
1Cited by
5References
55Claims
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Key dates
| Filing date | Mar 10, 2004 |
| Grant date | Nov 24, 2009 |
| Priority date | — |
| Expiry date | Oct 24, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a low dielectric constant structure. The method comprises providing at a first temperature a dielectric material having a first dielectric constant and a first elastic modulus, and curing the dielectric material by a thermal curing process, in which the material is heated to a second temperature by increasing the temperature at an average rate of at least 1° C. per second. As a result a densified, dielectric material is obtained which has a low dielectric constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.