Semiconductor device and method for manufacturing the same
US7622736B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2005 |
| Grant date | Nov 24, 2009 |
| Priority date | — |
| Expiry date | Feb 27, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
It is an object of the present invention to provide a volatile semiconductor device into which data can be additionally written and which is easy to manufacture, and a method for manufacturing the same. It is a feature of the present invention that a semiconductor device includes an element formation layer including a first transistor and a second transistor which are provided over a substrate; a memory element provided over the element formation layer; and a sensor portion provided above the memory element, wherein the memory element has a layered structure including a first conductive layer, and an organic compound layer, and a second conductive layer, the first conductive layer is electrically connected to the first transistor, and the sensor portion is electrically connected to the second transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.