III-nitride compound semiconductor light emitting device
US7622742B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 2004 |
| Grant date | Nov 24, 2009 |
| Priority date | — |
| Expiry date | May 7, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
The present invention relates to a III-nitride semiconductor light-emitting device having high external quantum efficiency, provides a III-nitride compound semiconductor light-emitting device including an active layer generating light by recombination of electrons and holes and containing gallium and nitrogen, an n-type Al(x)ln(y)Ga(1-x-y)N layer epitaxially grown before the active layer is grown, and an n-type electrode electrically contacting with the n-type Al(x)ln(y)Ga(1-x-y)N layer, in which the n-type Al(x)ln(y)Ga(1-x-y)N layer has a surface which is exposed by etching and includes a region for scribing and breaking the device and a region for contact with the n-type electrode, and the surface of the region for scribing and breaking the device is roughened, thereby it is possible to increase external quantum efficiency of the light-emitting device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.