Schottky diode with a vertical barrier
US7622752B2 · kind B2 · utility
1Cited by
15References
7Claims
0Family size
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Key dates
| Filing date | Dec 23, 2005 |
| Grant date | Nov 24, 2009 |
| Priority date | — |
| Expiry date | Dec 23, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/60
Abstract
A Schottky diode with a vertical barrier extending perpendicularly to the surface of a semiconductor chip having a vertical central metal conductor in contact on the one hand with the substrate of the semiconductor chip with an interposed interface forming a Schottky barrier, and on the other hand with radially-extending conductive fingers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.