Piezoelectric element and film formation method for crystalline ceramic
US7622854B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2008 |
| Grant date | Nov 24, 2009 |
| Priority date | — |
| Expiry date | Apr 8, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12528
Abstract
In a piezoelectric element having a substrate, a lower electrode layered on the substrate, a piezoelectric body made of ceramic layered on top of the lower electrode and an upper electrode layered on the piezoelectric body, wherein a first metal layer is provided between the substrate and the lower electrode, a second metal layer is provided between the lower electrode and the piezoelectric body, and the first metal layer and the second metal layer are made of a metal selected from among metals of which the ionization tendency is not less than that of Cu, oxides of metals of which the ionization tendency is not less than that of Cu, and alloys of metals of which the ionization tendency is not less than that of Cu.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.