Method for producing masks for photolithography and the use of such masks
US7625675B2 · kind B2 · utility
0Cited by
8References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2005 |
| Grant date | Dec 1, 2009 |
| Priority date | — |
| Expiry date | Mar 9, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mask for photolithography methods comprises opaque and transparent areas as well as a surface structure. For the contact with a substrate (10) to be exposed at least a few opaque areas are incorporated and at least a few transparent areas are arranged in a spaced fashion and are deep-etched down to a structural depth. In a further embodiment at least one transparent area is designed as a positively resting area (12). The structural depth in the deep-etched areas is greater than the thickness of the surface structure, at least greater than or equal to 1 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.