Method of manufacturing a substrate-free flip chip light emitting diode
US7625778B2 · kind B2 · utility
1Cited by
2References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 8, 2005 |
| Grant date | Dec 1, 2009 |
| Priority date | — |
| Expiry date | Jul 21, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12041
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate-free LED device is provided. The LED device comprises a substrate, an epitaxial layer disposed on the substrate, a first electrode disposed on a portion of the epitaxial layer, a second electrode disposed on another portion of the epitaxial layer, and a protection layer, disposed over the epitaxial layer. It is noted that in the LED device, the substrate comprises, for example but not limited to, high heat-sink substrate, and the protection layer comprises, for example but not limited to, high heat-sink, high transparent material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.