Light emitting diode having active region of multi quantum well structure
US7626209B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2008 |
| Grant date | Dec 1, 2009 |
| Priority date | — |
| Expiry date | Oct 30, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
Abstract
Disclosed is a light emitting diode having an active region of a multi quantum well structure. The active region is positioned between GaN-based N-type and P-type compound semiconductor layers. At least one of barrier layers in the active region includes an undoped InGaN layer and a Si-doped GaN layer, and the Si-doped GaN layer is in contact with a well layer positioned at a side of the P-type compound semiconductor layer therefrom. Accordingly, carrier overflow and a quantum confined stark effect can be reduced, thereby improving an electron-hole recombination rate. Further, disclosed is an active region of a multi quantum well structure including relatively thick barrier layers and relatively thin barrier layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.