Copper alloys and liquid-crystal display device
US7626665B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Aug 30, 2005 |
| Grant date | Dec 1, 2009 |
| Priority date | — |
| Expiry date | Jun 8, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136295
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To provide a highly conductive Cu alloy which is advantageous in that an alloying element added to Cu is first reacted with oxygen contained in a gas atmosphere or solid in contact with the Cu member to form an oxide film which can prevent oxidation of Cu. The copper alloy comprises copper (Cu) containing an inevitable impurity, and an element added to the copper, wherein the added element is capable of being dissolved in the copper in an amount of 0.1 to 20 at. %, wherein the added element has an oxide formation free energy smaller than that of Cu and has a diffusion coefficient in Cu larger than the self-diffusion coefficient of Cu.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.