Light-emitting device on n-type InP substrate heavily doped with sulfur
US7627009B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 9, 2007 |
| Grant date | Dec 1, 2009 |
| Priority date | — |
| Expiry date | Dec 14, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/824
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a structure of a light-emitting device which prevents the inter diffusion of impurities from the high-doped n-type InP substrate to a p-type current blocking layer. The substrate of the invention is highly doped with sulfur (S) to obtain high quality surface whose etch pit density (EPD) is less than 100 cm−2. The device includes such substrate, an optical guiding portion with an active layer, and a current blocking portion provided so as to bury the guiding portion. This current blocking portion includes, from the side of the substrate, a p-type layer, an n-type layer and another p-type layer. The device of the invention provides an n-type layer that is moderately doped with silicon between the n-type substrate and the p-type current blocking layer to prevent the inter diffusion of impurities from the substrate to the p-type layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.