Coated article with transparent conductive oxide film doped to adjust Fermi level, and method of making same
US7628896B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2005 |
| Grant date | Dec 8, 2009 |
| Priority date | — |
| Expiry date | Sep 11, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/9653
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A transparent conductive oxide (TCO) based film is formed on a substrate. The film may be formed by sputter-depositing, so as to include both a primary dopant (e.g., Al) and a co-dopant (e.g., Ag). The benefit of using the co-dopant in depositing the TCO inclusive film may be two-fold: (a) it may prevent or reduce self-compensation of the primary dopant by a more proper positioning of the Fermi level, and/or (b) it may promote declustering of the primary dopant, thereby freeing up space in the metal sublattice and permitting more primary dopant to create electrically active centers so as to improve conductivity of the film. Accordingly, the use of the co-dopant permits the primary dopant to be more effective in enhancing conductivity of the TCO inclusive film, without significantly sacrificing visible transmission characteristics. An example TCO in certain embodiments is ZnAlOx:Ag.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.